**HMC753LP4E: A 6 GHz to 26 GHz, GaAs MMIC Medium Power Amplifier**

The **HMC753LP4E** is a high-performance **Gallium Arsenide (GaAs), Monolithic Microwave Integrated Circuit (MMIC)** medium power amplifier, engineered to operate across an exceptionally wide frequency range from **6 GHz to 26 GHz**. This device is designed to meet the rigorous demands of modern microwave systems, providing a critical combination of wide bandwidth, solid power output, and high linearity where performance cannot be compromised.

Fabricated using a **0.15 µm GaAs pHEMT** process, the amplifier delivers a typical **small-signal gain of 18 dB**, ensuring significant signal amplification across its entire operating band. It achieves a **saturated power output (Psat) of +23 dBm** and an **output third-order intercept point (OIP3) of +32 dBm**, making it an excellent choice for both linear and saturated applications. These characteristics are vital for driving mixers or other components in the signal chain where maintaining signal integrity is paramount.

A key feature of the HMC753LP4E is its **unconditional stability**, ensured by integrated matching networks that simplify board-level design. The amplifier requires a single positive supply of **+5V at 120 mA**, and its **50-ohm matched input and output** minimize the need for external components, streamlining integration into larger assemblies. Housed in a compact, RoHS-compliant **4x4 mm LP4 leadless package**, it is ideally suited for space-constrained applications such as **test and measurement equipment, microwave radios, SATCOM, radar, and electronic warfare (EW) systems**.

**ICGOOODFIND**: The HMC753LP4E stands out as a robust and versatile solution for broadband microwave designs, offering an optimal blend of wide bandwidth, medium power, and high linearity in a miniature form factor.

**Keywords**: GaAs pHEMT, Medium Power Amplifier, 6-26 GHz, OIP3, MMIC