Infineon IPD60R1K5CE: A 600V CoolMOS™ CE Power Transistor for High-Efficiency Applications

In the rapidly advancing field of power electronics, achieving higher efficiency and power density is a constant pursuit. The Infineon IPD60R1K5CE, a 600V CoolMOS™ CE series power transistor, stands out as a premier solution engineered to meet these demanding requirements. Designed with cutting-edge technology, this MOSFET is optimized for a wide array of high-performance applications, including switch-mode power supplies (SMPS), power factor correction (PFC), lighting, and industrial drives.

At the heart of this device is Infineon’s innovative CoolMOS™ CE (Civil Engineering) technology, which sets a new benchmark in the balance between low on-state resistance (RDS(on)) and high switching performance. With a remarkably low RDS(on) of just 1.5 Ω, the IPD60R1K5CE minimizes conduction losses, enabling higher efficiency power conversion. This characteristic is especially critical in applications where energy savings and thermal management are paramount.

Another standout feature is its superior switching behavior, which reduces switching losses even at higher frequencies. This allows designers to push the boundaries of power density by using smaller magnetics and capacitors, thereby reducing the overall system size and cost. The transistor’s optimized gate charge (Qg) ensures easier drive capability and enhances reliability in high-frequency circuits.

The IPD60R1K5CE also incorporates a robust body diode with excellent reverse recovery characteristics, making it highly suitable for hard-switching and resonant topologies such as LLC converters. This improves system reliability and efficiency in applications like server power supplies and telecom infrastructure.

Furthermore, the device offers enhanced avalanche ruggedness and is designed to operate reliably under extreme conditions, providing an additional layer of durability in mission-critical environments. Its low thermal resistance package ensures effective heat dissipation, supporting sustained performance in continuous operation.

ICGOOODFIND:

The Infineon IPD60R1K5CE exemplifies how advanced semiconductor technology can drive efficiency and miniaturization in modern power systems. Its exceptional combination of low conduction loss, fast switching, and ruggedness makes it an ideal choice for next-generation power supplies and energy-efficient applications.

Keywords:

CoolMOS™ CE, High Efficiency, Low RDS(on), Power Transistor, Switching Performance