Infineon BSC025N03MSG 25V N-Channel MOSFET Datasheet and Application Review
The Infineon BSC025N03MSG is a state-of-the-art N-Channel MOSFET designed using Infineon’s advanced OptiMOS™ technology. This 25V, single-chip power MOSFET is engineered to deliver exceptional efficiency and thermal performance in a wide range of power management applications. With its low on-state resistance and high current handling capability, this component is an ideal choice for modern high-frequency switching systems.
A key highlight of the BSC025N03MSG is its extremely low typical RDS(on) of just 0.0025Ω (max 0.0032Ω) at a gate-source voltage of 10V. This ultra-low resistance minimizes conduction losses, which is critical for improving overall system efficiency, especially in high-current applications such as DC-DC converters, motor control circuits, and power management in computing and automotive systems. The device is also capable of supporting a continuous drain current (ID) of up to 80A, making it suitable for demanding load conditions.
The MOSFET is housed in a SuperSO8 package (PG-TDSON-8), which offers improved thermal characteristics and a compact footprint. This allows for better power dissipation and higher power density in space-constrained PCB designs. The package is also designed for enhanced switching performance, reducing parasitic inductance and supporting high-frequency operation.
Another notable feature is the device’s low gate charge (Qg typical 22nC), which ensures fast switching transitions and reduces driving losses. This makes the BSC025N03MSG highly effective in applications requiring high switching speeds, such as synchronous rectification in switched-mode power supplies (SMPS) and VRM (Voltage Regulator Module) designs.
From a reliability perspective, this MOSFET offers high robustness against avalanche and overcurrent conditions, along with a low thermal resistance junction-to-case (RthJC) of 0.95 K/W. These characteristics contribute to improved long-term operational stability under stressful environmental and electrical conditions.
---
ICGOODFIND Summary:
The Infineon BSC025N03MSG stands out as a high-performance N-channel MOSFET offering an optimal blend of low RDS(on), high current capability, and excellent thermal properties. Its SuperSO8 package and superior switching characteristics make it especially suitable for high-efficiency power conversion applications where thermal management and board space are critical constraints.
---
Keywords:
OptiMOS Technology, Low RDS(on), High Current Switching, SuperSO8 Package, Power Efficiency
