HMC374SC70ETR: A High-Performance GaAs pHEMT MMIC Low-Noise Amplifier for 17-24 GHz Applications

Release date:2025-09-04 Number of clicks:122

**HMC374SC70ETR: A High-Performance GaAs pHEMT MMIC Low-Noise Amplifier for 17-24 GHz Applications**

The **HMC374SC70ETR** represents a significant advancement in **monolithic microwave integrated circuit (MMIC)** technology, specifically engineered to meet the demanding requirements of modern **Ku-band and K-band systems**. Operating across the **17 to 24 GHz frequency range**, this amplifier is a critical component in applications such as point-to-point radio, satellite communication, military radar, and 5G infrastructure.

Fabricated using a **high-reliability 0.15 μm GaAs pHEMT process**, the HMC374SC70ETR is designed to deliver **exceptional low-noise performance**. It boasts a remarkably low **noise figure of just 1.8 dB**, which is crucial for preserving signal integrity and sensitivity in the receiver chain, especially in the presence of weak desired signals. Alongside its noise performance, the amplifier provides a high **small-signal gain of 18 dB**, ensuring that signals are amplified sufficiently for subsequent processing stages without degrading the system's overall signal-to-noise ratio.

The device is also characterized by its **high output IP3 of +24 dBm**, underscoring its superb linearity and ability to handle large input signals while minimizing intermodulation distortion. This makes it highly suitable for dense signal environments. Furthermore, it requires a minimal **positive bias supply of +3V at 60 mA**, contributing to its power efficiency. The integrated active bias circuitry enhances stability over temperature and process variations. Packaged in a compact, industry-standard **SC70 (SOT-323) surface-mount package**, it is ideal for high-density PCB designs.

**ICGOODFIND:** The HMC374SC70ETR stands out as a premier solution for high-frequency, low-noise amplification. Its optimal balance of ultra-low noise, high gain, and excellent linearity within a miniaturized form factor makes it an indispensable component for designers pushing the boundaries of performance in microwave systems.

**Keywords:** **GaAs pHEMT**, **Low-Noise Amplifier (LNA)**, **Ku-band**, **Noise Figure**, **MMIC**

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