Onsemi NRVTS2H60ESFT3G: High-Performance 60V Synchronous Rectification MOSFET

The relentless pursuit of higher efficiency and power density in modern switch-mode power supplies (SMPS) has made synchronous rectification (SR) a critical technology. Replacing traditional Schottky diodes with MOSFETs in the secondary side rectification circuit significantly reduces conduction losses, leading to cooler operation and greater overall system efficiency. The onsemi NRVTS2H60ESFT3G stands out as a premier component engineered specifically to meet these demanding requirements.

This MOSFET is built upon a sophisticated super-juction structure, optimized for the unique challenges of synchronous rectification. Its primary advantage lies in its exceptionally low gate charge (Qg) and low reverse recovery charge (Qrr). These parameters are paramount in high-frequency switching applications, as they directly influence switching losses and electromagnetic interference (EMI). The low Qrr minimizes the "body diode" reverse recovery effect, a common source of noise and efficiency loss, enabling cleaner and more stable switching behavior.

Furthermore, the NRVTS2H60ESFT3G boasts an impressively low on-resistance (RDS(on)) of just a few milliohms. This ultra-low resistance ensures minimal voltage drop and conduction losses when the device is fully turned on, directly translating into higher efficiency, especially under high-load conditions. This capability allows power supply designers to achieve new benchmarks in performance for applications such as server and telecommunication power systems, USB-C power delivery adapters, and industrial power converters.

The device is offered in a compact and robust DFN5x6 package, which provides an excellent balance between size and thermal performance. This small footprint is essential for the continued miniaturization of power electronics while ensuring effective heat dissipation. With a 60V drain-to-source voltage (VDS) rating, it offers a comfortable safety margin for standard 12V and 48V bus systems, enhancing system reliability.

ICGOODFIND: The onsemi NRVTS2H60ESFT3G is a high-performance MOSFET that sets a high standard for synchronous rectification. Its optimized combination of ultra-low RDS(on), minimized gate and reverse recovery charges, and a thermally efficient package makes it an superior choice for designers aiming to maximize efficiency and power density in next-generation power conversion systems.

Keywords: Synchronous Rectification, Low RDS(on), Low Gate Charge (Qg), Super-Junction MOSFET, Power Efficiency.